Internal Device Physics of 1.3μm Vertical Cavity Surface Emitting Laser

機譯：1.3μm垂直腔面發射激光器的內部器件物理

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We report on the simulation of 1.32μm vertical-cavity surface-emitting lasers (VCSELs). The device comprises a tunnel junction for current and optical confinement and features intra-cavity ring contacts. Distributed Bragg reflectors (DBRs) in the GaAs/AlGaAs material system form the optical cavity and are wafer-bonded to InP-based spacers. The active region consists of five InAlGaAs quantum wells (QW). For the simulations, a thermodynamic transport model is used for electrical and thermal calculations while the optical modes are computed by solving the vectorial Helmholtz equation with an finite element (FE) solver. Calibrations show good agreement with measurements and on this basis, electrical benefits of the TJ are studied. Moreover, the physics of thermal rollover are analyzed.

機譯：我們報告了1.32μm垂直腔面發射激光器（VCSEL）的仿真。該器件包括用于電流和光學限制的隧道結，并具有腔內環形觸點。 GaAs / AlGaAs材料系統中的分布式布拉格反射器（DBR）形成光學腔，并通過晶圓鍵合到基于InP的墊片。有源區由五個InAlGaAs量子阱（QW）組成。對于仿真，將熱力學傳輸模型用于電和熱計算，而光學模式是通過使用有限元（FE）求解器求解矢量亥姆霍茲方程來計算的。校準與測量結果吻合良好，在此基礎上，研究了TJ的電氣效益。此外，分析了熱翻轉的物理原理。

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來源
《Vertical-Cavity Surface-Emitting Lasers IX》|2005年|P.132-141|共10頁
會議地點 San JoseCA(US)
作者
Beat Hangartner; Joachim Piprek; Matthias Streiff; Stefan Odermatt; Bernd Witzigmann; reas Witzig;
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作者單位

Integrated Systems Laboratory, ETH Zuerich, Gloriastrasse 35, CH-8092 Zuerich, Switzerl;

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會議組織
原文格式 PDF
正文語種 eng
中圖分類 TN24;
關鍵詞
VCSEL; tunnel junction; electro-opto-thermal simulation;

機譯：VCSEL；隧道結；電光模擬;
入庫時間 2022-08-26 13:44:18

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專利

1. Gain-cavity alignment profiling of 1.3 mu m emitting GaInNAs vertical cavity surface emitting lasers (VCSELs) using high pressure techniques [J] . Knowles G., Tomic S., Jin S., Physica status solidi, B. Basic research . 2003,第2期

機譯：使用高壓技術對1.3μm發射GaInNAs垂直腔表面發射激光器（VCSEL）進行增益腔對準分析
2. Extended wavelength (1.0 to 1.3 μm) InGaAs/GaAs quantum dot GaAs-based vertical-cavity surface-emitting and lateral-cavity edge-emitting lasers [J] . D. G. Deppe, D. L. Huffaker International Journal of High Speed Electronics and Systems: Devices, Integrated Circuits and Systems, Optical and Quantum Electronics . 1998,第4期

機譯：擴展波長（1.0至1.3μm）InGaAs / GaAs量子點基于GaAs的垂直腔面發射和橫向腔邊緣發射激光器
3. Strained InGaAs quantum well vertical cavity surface emitting lasers emitting at 1.3 /spl mu/m [J] . Pougeoise E., Gilet P., Grosse P., Electronics Letters . 2006,第10期

機譯：應變InGaAs量子阱垂直腔表面發射激光器，發射功率為1.3 / spl mu / m
4. Internal Device Physics of 1.3μm Vertical Cavity Surface Emitting Laser [C] . Beat Hangartner, Joachim Piprek, Matthias Streiff, Society of Photo-Optical Instrumentation Engineers (SPIE);SPIE Proceedings . 2005

機譯：1.3μm垂直腔面發射激光器的內部器件物理
5. Optical injection locking on vertical-cavity surface-emitting lasers (VCSELs): Physics and applications. [D] . Zhao, Xiaoxue. 2008

機譯：垂直腔表面發射激光器（VCSEL）上的光學注入鎖定：物理和應用。
6. Swept-source optical coherence tomography powered by a 1.3... formula ... vertical cavity surface emitting laser enables 2.3-mm-deep brain imaging in mice in vivo [O] . Woo June Choi, Ruikang K. Wang 2015

機譯：由1.3 ...垂直腔表面發射激光器驅動的掃頻光學相干斷層掃描能夠在小鼠體內進行2.3毫米深的大腦成像
7. Influence of de-tuning and non-radiative recombination on the temperature dependence of 1.3 mu m GaAsSb/GaAs vertical cavity surface emitting lasers [O] . Hild, K, Marko, IP, Johnson, SR, 2011

機譯：失諧和非輻射復合對1.3μmGaAsSb / GaAs垂直腔面發射激光器的溫度依賴性的影響

Internal Device Physics of 1.3μm Vertical Cavity Surface Emitting Laser

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