Single mode 1.27-μm InGaAs:Sb-GaAs-GaAsP Quantum Well Vertical Cavity Surface Emitting Lasers

機譯：單模1.27μmInGaAs：Sb-GaAs-GaAsP量子阱垂直腔表面發射激光器

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1.27 μm InGaAs:Sb-GaAs-GaAsP vertical cavity surface emitting lasers (VCSELs) were grown by metalorganic chemical vapor deposition (MOCVD) and exhibited excellent performance and temperature stability. The threshold current changes from 1.8 to 1.1 mA and the slope efficiency falls less than ～35% as the temperature raised from room temperature to 70℃. With a bias current of only 5mA, the 3dB modulation frequency response was measured to be 8.36 GHz, which is appropriate for 10 Gb/s operation. The maximal bandwidth is measured to be 10.7 GHz with modulation current efficiency factor (MCEF) of ～ 525 GHz/(mA)~(1/2). These VCSELs also demonstrate high-speed modulation up to 10 Gb/s from 25℃ to 70℃.

機譯：通過金屬有機化學氣相沉積（MOCVD）生長了1.27μmInGaAs：Sb-GaAs-GaAsP垂直腔表面發射激光器（VCSEL），它具有出色的性能和溫度穩定性。隨著溫度從室溫升高到70℃，閾值電流從1.8mA變為1.1mA，斜率效率下降到?35％以下。在偏置電流僅為5mA的情況下，測得的3dB調制頻率響應為8.36 GHz，適用于10 Gb / s的操作。測量的最大帶寬為10.7 GHz，調制電流效率因子（MCEF）為525 GHz /（mA）?（1/2）。這些VCSEL還展示了從25℃到70℃的高達10 Gb / s的高速調制。

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來源
《Vertical-Cavity Surface-Emitting Lasers IX》|2005年|P.151-156|共6頁
會議地點 San JoseCA(US)
作者
Hao-Chung Kuo; Yi-An Chang; Ya-Hsien Chang; Jung-Tang Chu; Min-Ying Tsai; Shing-Chung Wang;
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作者單位

Department of Photonics Institute of Electro-optical Engineering, National Chiao-Tung University, Hsinchu, Taiwan, R. O. C.;

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會議組織
原文格式 PDF
正文語種 eng
中圖分類 TN24;
關鍵詞
strain-compensated; high-speed electronics; VCSELs; InGaAsP/InGaP; proton-implant;

機譯：應變補償高速電子VCSEL InGaAsP / InGaP質子注入;
入庫時間 2022-08-26 13:44:18

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1. Single-mode 1.27-/spl mu/m InGaAs:Sb-GaAs-GaAsP quantum well vertical cavity surface emitting lasers [J] . Hao-Chung Kuo, Ya-Hsien Chang, Yi-An Chang, IEEE journal of selected topics in quantum electronics . 2005,第1期

機譯：單模1.27- / spl mu / m InGaAs：Sb-GaAs-GaAsP量子阱垂直腔表面發射激光器
2. Single-mode 1.27-Μm InGaAs:Sb-GaAs-GaAsP quantum well vertical cavity surface emitting lasers [J] . Hao-Chung Kuo, Ya-Hsien Chang, Yi-An Chang, IEEE journal of selected topics in quantum electronics . 2005,第1期

機譯：單模1.27μmInGaAs：Sb-GaAs-GaAsP量子阱垂直腔表面發射激光器
3. High-Speed Modulation of InGaAs:Sb-GaAs-GaAsP Quantum-Well Vertical-Cavity Surface-Emitting Lasers With 1.27-μm Emission Wavelength [J] . H. C. Kuo, Y. H. Chang, H. H. Yao, IEEE Photonics Technology Letters . 2005,第3期

機譯：發射波長為1.27μm的InGaAs：Sb-GaAs-GaAsP量子阱垂直腔表面發射激光器的高速調制
4. Single mode 1.27-μm InGaAs:Sb-GaAs-GaAsP Quantum Well Vertical Cavity Surface Emitting Lasers [C] . Hao-Chung Kuo, Yi-An Chang, Ya-Hsien Chang, Society of Photo-Optical Instrumentation Engineers (SPIE);SPIE Proceedings . 2005

機譯：單模1.27μmInGaAs：Sb-GaAs-GaAsP量子阱垂直腔表面發射激光器
5. Quantum efficiency enhancement for GaN based light-emitting diodes and vertical cavity surface-emitting lasers. [D] . Zhang, Fan. 2014

機譯：GaN基發光二極管和垂直腔表面發射激光器的量子效率增強。
6. Delay-Differential-Equation Modeling of Mode-Locked Vertical-External-Cavity Surface-Emitting Lasers in Different Cavity Configurations [O] . Eugene A. Avrutin, Krassimir Panajotov 2019

機譯：不同腔配置中鎖模垂直外腔面發射激光器的時滯-微分方程建模
7. Single-photon emission at a rate of 143 MHz from a deterministic quantum-dot microlens triggered by a mode-locked vertical-external-cavity surface-emitting laser [O] . A. Schlehahn, M. Gaafar, M. Vaupel, 2015

機譯：由由模式鎖定的垂直外腔表面發射激光器觸發的確定性量子點微透鏡的單光子發射為143MHz的速率
8. InGaAs-GaAs Quantum Well Vertical-Cavity Surface-Emitting Laser Using MolecularBeam Epitaxial Regrowth [R] . Lei, C., Rogers, T. J., Deppe, D. G., 1991

機譯：采用molecularBeam外延再生的InGaas-Gaas量子阱垂直腔面發射激光器

Single mode 1.27-μm InGaAs:Sb-GaAs-GaAsP Quantum Well Vertical Cavity Surface Emitting Lasers

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