首頁> 外文會議>Vertical-Cavity Surface-Emitting Lasers IX >VCSELs emitting in the 1310 nm waveband for novel optical communication applications
【24h】

VCSELs emitting in the 1310 nm waveband for novel optical communication applications

機譯:在新型光通信應用中以1310 nm波段發射的VCSEL

獲取原文
獲取原文并翻譯 | 示例

摘要

High performance vertical cavity surface emitting lasers (VCSELs) emitting in the 1310 nm waveband are fabricated by bonding AlGaAs/GaAs distributed Bragg reflectors (DBRs) on both sides of a InP-based cavity containing 5 InAlGaAs quantum wells using the localized wafer fusion technique. A tunnel junction structure is used to inject carriers into the active region. Devices with 7 μm aperture produce single mode emission with 40 dB side-mode suppression ratio. Maximum single mode output power of 1.7 mW is obtained in the temperature range of 20-70℃. Modulation capability at 3.2 Gb/s is demonstrated both at room temperature and 70℃ with rise time and fall time values of eye diagrams bellow 120 ps. Overall device performance complies with the requirements of 10 GBASE-LX4 IEEE.802.3ae standard.
機譯:通過使用局部晶片融合技術,在包含5個InAlGaAs量子阱的基于InP的腔體的兩側粘合AlGaAs / GaAs分布式布拉格反射器(DBR),可以制造在1310 nm波段發射的高性能垂直腔體表面發射激光器(VCSEL)。隧道結結構用于將載流子注入有源區??讖綖?μm的器件產生具有40 dB副模抑制比的單模發射。在20-70℃的溫度范圍內,最大單模輸出功率為1.7 mW。在眼圖的上升時間和下降時間值在120 ps以下時,在室溫和70℃時都顯示出3.2 Gb / s的調制能力??傮w設備性能符合10 GBASE-LX4 IEEE.802.3ae標準的要求。

著錄項

相似文獻

  • 外文文獻
  • 中文文獻
  • 專利
獲取原文

客服郵箱:[email protected]

京公網安備:11010802029741號 ICP備案號:京ICP備15016152號-6 六維聯合信息科技 (北京) 有限公司?版權所有
  • 客服微信

  • 服務號

澳门三肖三码期期准精选反板块